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| SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 4 - MARCH 2001 3E 7E PARTMARKING DETAIL - FMMTA42 - FMMTA42R - FMMTA42 E C B COMPLEMENTARY TYPES - FMMTA42 - FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC P tot T j :T stg FMMTA42 300 300 5 200 330 -55 to +150 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) h FE 25 40 40 50 6 MIN. 300 300 6 0.1 0.1 0.1 0.1 0.5 0.9 25 40 50 50 8 0.4 0.9 MAX. MIN. 200 200 6 MAX. UNIT V V V CONDITIONS. I C=100A, I E=0 I C=1mA, I B=0* I E=100A, I C=0 V CB=200V, I E=0 V CB=160V, I E=0 V EB=6V, I C=0 V EB=4V, I C=0 I C=20mA, I B=2mA* I C=20mA, I B=2mA* I C=1mA, V CE=10V* I C=10mA, V CE=10V* I C=30mA, V CE=10V* MHz pF I C=10mA, V CE=20V f=20MHz V CB=20V, f=1MHz A A A A V V 200 fT C obo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% TBA |
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